? semiconductor components industries, llc, 2008 june, 2008 ? rev. 4 1 publication order number: MUR8100E/d MUR8100E, mur880e MUR8100E is a preferred device switchmode power rectifiers ultrafast ?e?? series with high reverse energy capability the mur8100 and mur880e diodes are designed for use in switching power supplies, inverters and as free wheeling diodes. features ? 20 mj avalanche energy guaranteed ? excellent protection against voltage transients in switching inductive load circuits ? ultrafast 75 nanosecond recovery time ? 175 c operating junction temperature ? popular to ? 220 package ? epoxy meets ul 94 v ? 0 @ 0.125 in. ? low forward voltage ? low leakage current ? high temperature glass passivated junction ? reverse voltage to 1000 v ? pb ? free packages are available* mechanical characteristics: ? case: epoxy, molded ? weight: 1.9 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ordering information MUR8100E to ? 220 50 units / rail ultrafast rectifiers 8.0 a, 800 v ? 1000 v 50 units / rail preferred devices are recommended choices for future use and best overall value. 1 3 4 MUR8100Eg to ? 220 (pb ? free) 50 units / rail http://onsemi.com mur880e to ? 220 50 units / rail mur880eg to ? 220 (pb ? free) to ? 220ac case 221b 4 3 1 marking diagram ay wwg u8xxxe ka a = assembly location y = year ww = work week g=pb ? free package u8xxxe = device code xxx = 100 or 80 ka = diode polarity
MUR8100E, mur880e http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage mur880e MUR8100E v rrm v rwm v r 800 1000 v average rectified forward current (rated v r , t c = 150 c) total device i f(av) 8.0 a peak repetitive forward current (rated v r , square wave, 20 khz, t c = 150 c) i fm 16 a non ? repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 100 a operating junction and storage temperature range t j , t stg ? 65 to +175 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. thermal characteristics characteristic symbol value unit maximum thermal resistance, junction ? to ? case r jc 2.0 c/w electrical characteristics characteristic symbol value unit maximum instantaneous forward voltage (note 1) (i f = 8.0 a, t c = 150 c) (i f = 8.0 a, t c = 25 c) v f 1.5 1.8 v maximum instantaneous reverse current (note 1) (rated dc voltage, t c = 100 c) (rated dc voltage, t c = 25 c) i r 500 25 a maximum reverse recovery time (i f = 1.0 a, di/dt = 50 a/ s) (i f = 0.5 a, i r = 1.0 a, i rec = 0.25 a) t rr 100 75 ns controlled avalanche energy (see test circuit in figure 6) w aval 20 mj 1. pulse test: pulse width = 300 s, duty cycle 2.0%.
MUR8100E, mur880e http://onsemi.com 3 * the curves shown are typical for the highest voltage device in the voltage * grouping. typical reverse current for lower voltage selections can be * estimated from these same curves if v r is sufficiently below rated v r . figure 1. typical forward voltage figure 2. typical reverse current* figure 3. current derating, case figure 4. current derating, ambient figure 5. power dissipation 1.8 0.4 v f , instantaneous voltage (volts) 100 50 5.0 10 3.0 v r , reverse voltage (volts) 0 10 0.1 0.01 t c , case temperature ( c) 150 140 10 3.0 2.0 1.0 0 20 60 0 t a , ambient temperature ( c) 8.0 6.0 4.0 2.0 0 i f(av) , average forward current (amps) 1.0 0 14 10 8.0 2.0 0 4.0 40 i f , instantaneous forward current (amps) i i 0.7 0.5 1.2 0.8 1.0 1.4 1.6 200 400 600 800 1000 1.0 100 10,000 170 180 , average forward current (amps) i f(av) 80 120 100 10 2.0 3.0 5.0 6.0 p f(av) , average power dissipation (watts) 2.0 20 0.1 0.3 7.0 1.0 30 , reverse current ( a) r 160 140 160 200 180 , average forward current (amps) f(av) 6.0 5.0 4.0 9.0 8.0 7.0 6.0 9.0 7.0 8.0 10 7.0 5.0 3.0 1.0 9.0 t j = 175 c square wave dc rated v r applied square wave dc t j = 25 c 100 c 150 c t j = 175 c 25 c 100 c 70 0.2 1000 4.0 12 r ja = 16 c/w r ja = 60 c/w (no heat sink) square wave dc square wave dc 0.6 175 c
MUR8100E, mur880e http://onsemi.com 4 t 0 t 1 t 2 t v dd i d i l bv dut mercury switch figure 6. test circuit figure 7. current ? voltage waveforms +v dd dut 40 h coil v d i l s 1 i d the unclamped inductive switching circuit shown in figure 6 was used to demonstrate the controlled avalanche capability of the new ?e?? series ultrafast rectifiers. a mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. when s 1 is closed at t 0 the current in the inductor i l ramps up linearly; and energy is stored in the coil. at t 1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt ef fects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at bv dut and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t 2 . by solving the loop equation at the point in time when s 1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total ener gy transferred is equal to the ener gy stored in the inductor plus a finite amount of energy from the v dd power supply while the diode is in breakdown (from t 1 to t 2 ) minus any losses due to finite component resistances. assuming the component resistive elements are small equation (1) approximates the total energy transferred to the diode. it can be seen from this equation that if the v dd voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when s 1 was closed, equation (2). the oscilloscope picture in figure 8, shows the MUR8100E in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 v, and using equation (2) the energy absorbed by the MUR8100E is approximately 20 mjoules. although it is not recommended to design for this condition, the new ?e?? series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments. w aval 1 2 li 2 lpk bv dut bv dut v dd w aval 1 2 li 2 lpk figure 8. current ? voltage waveforms channel 2 : i l 0.5 amps/div. channel 1 : v dut 500 volts/div. time base : 20 s/div. equation (1): equation (2): ch1 ch2 ref ref ch1 ch2 acquisitions saveref source 1 217:33 hrs stack a 20 s 953 v vert 500v 50mv
MUR8100E, mur880e http://onsemi.com 5 t, time (ms) 100 1.0 0.5 0.07 0.05 0.01 v r , reverse voltage (volts) 10 1.0 1000 300 100 30 10 c, capacitance (pf) 2.0 5.0 10 20 50 0.3 0.7 1.0 100 r(t), transient thermal resistance 0.2 0.1 0.03 0.02 0.01 0.02 0.05 0.1 0.2 0.5 200 500 1000 t j = 25 c (normalized) figure 9. thermal response figure 10. typical capacitance d = 0.5 0.1 0.05 0.01 single pulse z jc (t) = r(t) r jc r jc = 1.5 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2
MUR8100E, mur880e http://onsemi.com 6 package dimensions to ? 220 two ? lead case 221b ? 04 issue e b r j d g l h q t u a k c s 4 13 dim min max min max millimeters inches a 0.595 0.620 15.11 15.75 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.82 d 0.025 0.035 0.64 0.89 f 0.142 0.161 3.61 4.09 g 0.190 0.210 4.83 5.33 h 0.110 0.130 2.79 3.30 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.14 1.52 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.14 1.39 t 0.235 0.255 5.97 6.48 u 0.000 0.050 0.000 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. f on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. MUR8100E/d switchmode is a trademark of semiconductor components industries, llc. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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